Articles
  • Electrical characteristics of Al2O3/Ta2O5/SiO2 multi-layer films using various tunnel oxide thicknesses at different annealing temperatures 
  • Jung Tae Parka,b, Hyo June Kima and Doo Jin Choia,*
  • a Department of Materials science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea b Technology Innovation Group, Samsung Electro-Mechanics, 314 Meatan-3 dong, Youngtong-gu, Suwon-si, Kyunggi-do 443- 743, Korea
Abstract
In this study, we investigated the electrical properties of Al2O3/Ta2O5/SiO2 (ATS) films using various tunnel oxide (bottom oxide) thicknesses at different annealing temperatures. With a 5 nm thick tunnel oxide, the program/erase conditions were 11 V for 100 ms and -13 V for 100 ms, respectively. The memory window of the film was 0.91 V. To improve the film quality, the film was annealed at 900 degrees C. The thickness of the multi-layer film decreased after the annealing process. The program/erase conditions of the annealed films changed to 9 V for 100 ms and -13 V for 100 ms, respectively. The memory window of the annealed film was 1.05 V. The retention properties of the as-deposited and annealed films did not change up to 10(4) cycles. The electrical characteristics of ATS structures using various tunnel oxide thicknesses at different annealing temperatures were investigated for application in next generation non-volatile memories.

Keywords: Ta2O5; high-k; MOCVD; retention; annealing

This Article

  • 2010; 11(6): 728-732

    Published on Dec 31, 2010