Articles
  • InP/InGaAs/InP DHBT structures with N+ doped composite collectors grown by gas source molecular beam epitaxy 
  • Anhuai Xu*, Likun Ai, Hao Sun, Ming Qi, Shubing Sua, Xinyu Liua, Xunchun Liua and He Qiana
  • State Key Lab of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China a Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Abstract
InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) structural materials with N+ doped composite collectors were designed and grown successfully by gas source molecular beam epitaxy (GSMBE). High-quality lattice-matched InGaAs/InP hetero epi-layers were obtained through optimizing the growth conditions. The performance of InP/InGaAs/InP DHBTs with a thin heavily doped n-type InP layer at the base-collector interface was also demonstrated. It was shown that the energy barrier between the base and collector was effectively eliminated by a 3 nm thick n-type InP layer with N-D = 3 x 10(19) cm(-3). The DHBT devices with an emitter size of 2 x 12 mu m(2) showed f(T) > 80 GHz and BVceo > 9 V, which can be comparable to the results reported for DHBTs with a graded layer between the base and collector.

Keywords: InGaAs/InP; molecular beam epitaxy (MBE); energy barrier; doping; double heterojunction bipolar transistor (DHBT)

This Article

  • 2006; 7(2): 177-179

    Published on Jun 30, 2006