Articles
  • Thermal annealing effect on nitrogen related defects of GaInNAs semiconductors
  • Kang Min Kima, Jung-Il Leeb and Jeong Ho Ryub,*
  • a National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568, Japan b Department of Materials Science and Engineering, Korea National University of Transportation, Chungju, Chungbuk 380-702, Korea
Abstract
Nitrogen related defects of GaInNAs epilayers grown by molecular beam epitaxy were investigated before and after rapid thermal annealing using X-ray photoelectron spectroscopy (XPS). XPS analysis revealed that the N-induced defect configurations are most likely attributed to the N-As spilt interstitials and (NAs-AsGa) complex. Comparison of as-grown and annealed samples showed that the nearest N-bonding configuration of GaInNAs changes from Ga3In1N to Ga1In3N after annealing, which can lead to reduction of the local strain. Annealed sample demonstrated a reduced the defect concentration, which could be due to the transformation of nearest N-bonding configuration after annealing.

Keywords: GaInNAs, Thermal annealing, N-induced defect.

This Article

  • 2015; 16(1): 45-48

    Published on Feb 28, 2015

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