Articles
  • Deposition of Cr-doped SrZrO3 thin films on Si substrates and their resistance switching characteristics
  • Min Kyu Yanga,b, Jae-Wan Parkc, Sun Young Choia and Jeon-Kook Leea,*
  • a Optoelectronic Materials Center, KIST, Seoul 136-791, Korea b Department of Electrical and Electronic Engineering, Yonsei Univ., Seoul 120-749, Korea c Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53705, USA
Abstract
Cr-doped SrZrO3 perovskite thin films were deposited on SrRuO3 bottom electrode/SiO2/Si(100) substrates by pulsed laser deposition. The SrZrO3 : Cr perovskite and SrRuO3 bottom electrode showed a well controlled interface, as well as good resistive switching behavior with an ON/OFF ratio > 103. Resistive switching memory devices made from Cr-doped SrZrO3 thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

Keywords: Resistive switching, SrZrO3, Non-volatility memory

This Article

  • 2011; 12(3): 233-235

    Published on Jun 30, 2011