Articles
  • Preparation of Si infiltrated SiB6-TiB2 composites 
  • Geum-Chan Hwang* and Jun-ichi Matsushita
  • United Graduate School of Science and Engineering, Tokai University, 1117 Kitakaname, Hiratsuka 259-1292, Japan
Abstract
SiB6 and THB2 ceramics show good thermal propel-ties, electrical conductivity, and excellent hardness. Unfortunately, these materials have poor sinterability. In this study the preparation of SiB6-TiB2 composites using SiB6 and TiB2 powders was investigated to determine the sinterabilities and properties. We have performed two reaction stages for the preparation of Si-Ti-B-C depending on the sintering conditions. The Vickers hardness at room temperature of an STC sample and 7S3TC sample shows the highest value of about 23 GPa at 40 mass% carbon of STC4. respectively. The X-ray diffraction patterns of sintered bodies of SiB6-TiB2 by Si infiltration Show SiB6 and C including carbonized phenolic resin has changed to B4C and SiC. No pores were observed in any of specimens by scanning electron microscopy (SEM). Maximum point of electrical conductivity of 7S3TC and STC was 7.3 x 10(4) S/m and 5 x 10(4) S/m at 973 K, respectively.

Keywords: Silicon boride; Titanium boride; Infiltration; Vickers hardness

This Article

  • 2010; 11(1): 1-5

    Published on Feb 28, 2010