La-doped lead zirconate titanate (PLZT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by RF magnetron sputtering method. The crystallinity and the electrical properties of the films were investigated as a function of deposition temperature. As the deposition temperature was increased, the preferred orientation of films was changed from the (110) to the (111) plane. The (110) plane decreases with further increase of the substrate temperature to 500 oC. The PLZT films deposited to 400 oC showed good electric properties with a remnant polarization of 15.8 μC/cm2 and a leakage current of 5.4 × 10-9 A/cm2. As the deposition temperature was increased 500 oC, the PLZT films tended to be Pb-deficient, resulting in the degradation of electrical properties.

Keywords: ferroelectrics, PLZT (Pb0.92La0.08)(Zr0.65Ti 0.35)O3, TiO2 buffer layer, substrate temperature.