Articles
  • Study of CVD SiC deposition for TRISO coated fuel material fabrication by computational simulation and actual experiment 
  • Jun Gyu Kima, E-Sul Kuma, Doo Jin Choia,*, Sung Soon Kima, Hong Lim Leea, Young Woo Leeb and Ji Yeon Parkb
  • a Department of Ceramic Engineering, Yonsei University, 134 Shinchon-dong, Sudaemun-ku, Seoul 120-749, Korea b Functional Materials, Korea Atomic Energy Research Institute, P.O. Box 105, Yusung-ku, Daejeon 305-600, Korea
Abstract
The silicon carbide (SiC) layer in tristructural isotropic (TRISO) coated fuel particles is a critical and essential layer for hydrogen production using high temperature gas cooled reactor (HTGR) since it is a protective layer against diffusion of metallic and gaseous fission products and provides mechanical strength for the fuel particle. In this study, SiC layers were deposited using a high temperature and high pressure horizontal hot wall chemical vapor deposition (CVD) system as an application of fluidized bed chemical vapor deposition (FB-CVD). Before the actual experiment, we performed computational simulations of the gas velocity, temperature profile and pressure in the reaction chamber with various process conditions. The simulation showed that the change of reactant states affects the growth rate at each position on the susceptor. As the deposition temperature increased, the microstructure, chemical composition and growth behavior changed and deposition rate increased. The simulation results were in good agreement with the experimental results.

Keywords: TRISO; SiC; simulation; CVD

This Article

  • 2007; 8(6): 388-392

    Published on Dec 31, 2007