Articles
  • Preparation of Ti-doped ZnO transparent conductive thin films by PLD method 
  • Hyun Woo Lee, Bong Geun Choia, Kwang Bo Shima and Young-Jei Oh*
  • Thin Film Materials Research Center, KIST, Seoul 136-791, Korea a Dept. of Ceramic Eng., CPRC, Hanyang Univ., Seoul 133-791, Korea
Abstract
Ti-doped ZnO thin films were prepared on a soda-lime glass substrate without any post heat treatment by a pulsed laser deposition (PLD) method. Processing parameters such as deposition substrate temperature, the amount of Ti-doping and oxygen flow rate were investigated. It was found that the Ti-doped ZnO thin films exhibited a strongly preferred orientation along a C-axis (002) plane and their structural, electrical and optical properties depended strongly on these parameters. Transparent conducting ZnO oxide thin films with 1 mol% Ti content formed under the conditions of a substrate temperature of 100oC in an oxygen flow rate of 10 sccm showed an electrical resistivity of 3.3 × 10−2 Ωcm, a mean optical transmittance of 92.3% with a thickness of 480 nm.

Keywords: Pulsed laser deposition (PLD), ZnO, Transparent conducing oxide (TCO)

This Article

  • 2005; 6(1): 52-56

    Published on Mar 31, 2005