Articles
  • Effect of nitridation on the orientation of GaN layer grown on m-sapphire substrates using hydride vapor phase epitaxy 
  • Youngjong Wona, Byeongchan Soa, Seohwi Wooa, Dongheon Leea, Minho Kima, Kibum Namb, Sujin Imb, Kwang Bo Shimc and Okhyun Nama,*
  • a Advanced Photonics Research Center/LED Technology Center, Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-93, Korea b Department of Characterization & Analysis, Seoul Opto Device Co, Ansan, Korea c Division of Materials Science and Engineering, Hanyang University, 17 Hangdang-dong Seongdong-gu, Seoul 133-791, Korea
Abstract
This study reports the effect of nitridation on the orientation of GaN layers grown on m-plane sapphire (Al2O3) substrates by hydride vapor phase epitaxy (HVPE). Non-polar (10-10) GaN layers were grown on m-sapphire without nitridation. With increasing nitridation time, the crystallographic phases of the GaN layer changed from non-polar to semi-polar (11-22) through mixed phases of (10-1-3) and (11-22). The phase change with nitridation was attributed to the formation of the nanosized AlN protrusions with slanted facets. This was confirmed by X-ray photoelectron spectroscopy and atomic force microscopy.

Keywords: HVPE; Semi-polar; Non-polar; GaN; Nitridation

This Article

  • 2014; 15(2): 61-65

    Published on Apr 30, 2014