Articles
  • Reduction of wafer bow in free standing GaN grown by HVPE 
  • Hoki Sona, Jin-Ho kima, Mi-jai Leea, Tae-Young Lima, Hae-Kon Ohb, Jin-Hun Kimb, Young-Jun Choib, Hae-Yong Leeb, Kwang Bo Shimc and Jonghee Hwanga,*
  • a Korea Institute of Ceramic Engineering & Technology (KICET), 233-5 Gasan-Dong, Guemcheon-Gu, Seoul 153-801, Korea b LumiGNtech Co, Ltd, Room 206, Business Incubator Bldg, 233-5 Gasan-Dong, Guemcheon-Gu, Seoul 153-801, Korea c Division of Materials Science and Engineering, Hanyang University, 17 Hangdang-dong Seongdong-gu, Seoul 133-791, Korea
Abstract
In this study, GaN layers on sapphire were grown by hydride vapor phase epitaxy (HVPE). And free standing (FS) GaN layers were obtained after laser lift off (LLO) process. We controlled growth temperature to minimized bow of the FS-GaN after LLO process. Target thickness of GaN epilayers were over 300 mu m. GaN templates showed strong convex bowing at room temperature and the bow values showed any particular relation with growth temperature. But bows of FS-GaN substrates after LLO treatment showed mainly concave mode and those decreased according to reducing the growth temperature from 1010 degrees C to 1000 degrees C We show that reduction of bows in FS-GaN can be controlled by the growth condition of HVPE process.

Keywords: GaN substrate; Free standing GaN; HVPE and Bow

This Article

  • 2014; 15(2): 57-60

    Published on Apr 30, 2014