Crystallographic features of boronmonophosphide (BP) semiconducting layers grown directly on (111)Si by a triethylboran/ phosphine atmospheric-pressure MOCVD system were investigated by X-ray diffraction and transmission electron diffraction (TED) techniques. The unintentionally-doped BP layers grown at 1025oC with an input PH3/(C2H5)3B ratio of about 150 had transparent mirror (111) surfaces with an orientation relationship of (111)[110]BP//(111)[110]Si. At the hetero-interface between the MOCVD-grown BP layer and the Si substrate, an amorphous thin layer containing Si, P, and O (oxygen) was formed. In addition to these features, TED pattern revealed that the BP layer consisted of {111} twins. The MOCVD-grown BP layers showed p-type conductivity with a carrier concentration of 6.3´1019 cm-3 and with room temperature mobility of 70 cm2/Vs.

Keywords: Epitaxial growth, Heterostructure, MOCVD, III-V compound semiconductor, Boronphosphide, Si, Twin, Orientation