Articles
  • Effect of dopants(Tri-valent, Penta-valent) on the electrical and optical properties of SnO2 based transparent electrodes
  • G. W. Kima, C. H. Sunga ,Y. J. Seoa, K. Y. Parka, S. N. Heoa, S. H. Leeb and B. H. Kooa,*
  • a School of Nano & Advanced Materials Engineering, Changwon National University, Changwon 641-773, Gyeongnam, Korea b Department of Material Processing, Advanced Thin Film Research Group, Korea Institute of Materials Science (KIMS), Changwon 641-010, Gyeongnam, Korea
Abstract
In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 οC. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

Keywords: Transparent Conductive Oxide (TCO), Transmittance, Tin Oxide(SnO2), Figure of merit

This Article

  • 2012; 13(S2): 394-397

    Published on Nov 30, 2012