Articles
  • Thermoelectric properties of silicon hexaboride prepared by spark plasma sintering method  
  • Dae Woong Lee, Kyoung Hun Kim, J. Matsushitaa, K. Niiharab, Keun Ho Auh and Kwang Bo Shim*
  • CPRC, Hanyang Univ., Seoul 133-791, Korea a Dept. of Mat. Sci., Tokai Univ., Hirasuka 259-1292, Japan b ISIR, Osaka Univ., Japan
Abstract
Silicon hexaboride is attractive for various industrial applications because of its high temperature capability, high hardness and excellent electrical conductivity, in particular it is a promising material for use as a thermoelectric semiconductor at high temperature. We have used a spark plasma sintering technique to produce silicon hexaboride ceramics. The Seebeck coefficient, electrical conductivity and thermal conductivity were measured and the effect of additives, phase composition and microstructure on the thermoelectric properties were discussed. The approximate value of Z (figure of merit value) of the SPS specimen reached about 9.6×10-6/K at 1273 K. The thermoelectric properties (Z) of the SPS specimen are improved in comparison with the specimen by hot-pressing. The effect of the addition of lanthanum and boron on thermoelectric properties of SiB6 were also evaluated.

Keywords: spark plasma sintering(SPS), silicon hexaboride(SiB6), thermoelectric, Seebeck Coefficient

This Article

  • 2002; 3(3): 182-185

    Published on Sep 30, 2002