Articles
  • Rapid consolidation of binderless nanocrystalline silicon carbide by pulsed current activated sintering
  • Na-Ra Parka, In-Yong Koa, In-Jin Shona,b,*, Kyung-Tae Hongc, Jung-Mann Dohc, Se-Hoon Ohd and Jin-Kook Yoonc
  • a Division of Advanced Materials Engineering and the Research Center of Advanced Materials Development, Engineering College, Chonbuk National University, 561-756, Republic of Korea b Department of Hydrogen and Fuel Cells Engineering, Specialized Graduate School, Chonbuk National University, 561-756, Republic of Korea c Advanced Functional Materials Research Center, Korea Institute of Science and Technology, PO Box 131, Cheongryang, Seoul 130-650, Republic of Korea d Department of Mechanical Engineering, Chung-Ang University, Seoul, Republic of Korea.
Abstract
Hard nanostructured SiC material was produced within 3 minutes from mechanically activated powder by the simultaneous application of a pressure of 500MPa and a 2,800 A pulsed current. The pulsed current activated sintering was performed on SiC of various grain sizes. With a finer initial SiC powder size, the resulting density was higher and the SiC possessed improved mechanical properties. The fracture toughness, hardness, and grain size of the sintered SiC were investigated.

Keywords: Rapid sintering, Nanostructured material, Silicon carbide, Hardness, Toughness

This Article

  • 2011; 12(5): 534-537

    Published on Oct 31, 2011