Articles
  • Forming a thick CdZnTe epitaxial film by sublimating closely spaced
  • Xiang-Xiang Luoa,b*, Cheng-Fang Qiaoa, Simon R Hallb and Chun-Sheng Zhoua,*

  • aCollege of Chemical Engineering and Modern Materials, Shangluo University, China
    bSchool of Chemistry, University of Bristol, UK

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

References
  • 1. T.E. Schlesinger, J.E. Toney, H. Yoon, E.Y. Lee, B.A. Brunett, L. Franks, and R.B. James, Mat. Sci Eng. R. 32[4-5] (2001) 103-189.
  •  
  • 2. M. Niraula, K. Yasuda, R. Torii, R. Tamura, Y. Higashira, and Y. Agata, J. Electron Mater. 48[12] (2019) 7680-7685.
  •  
  • 3. S. Wu, Z. Huang, B. Chen, X. Liu, Y. Ma, Y. Huang, S. Tang, C. Liang, and W. Liu, Mater Charact. 185 (2022) 111739.
  •  
  • 4. X. Luo, G. Zha, L. Xu, and W. Jie, Sensors. 19[3] (2019).
  •  
  • 5. G. Sato, T. Fukuyama, S. Watanabe, H. Ikeda, M. Ohta, S.n. Ishikawa, T. Takahashi, H. Shiraki, and R. Ohno, Nucl. Instrum. Methods Phys. Res. Sect. A. 652[1] (2011) 149-152.
  •  
  • 6. A. Cola, I. Farella, N. Auricchio, and E. Caroli, J. Opt. A:Pure. Appl. Opt. 8[7] (2006) S467.
  •  
  • 7. R.E. Meredith and C.W. Tobias, J. Electrochem. Soc. 110[12] (1963) 365-370.
  •  
  • 8. R. Yakimova, A. Kakanakova-Georgieva, G.R. Yazdi, G.K. Gueorguiev, and M. Syvaejaervi, J. Cryst. Growth. 281[1] (2005) 81-86.
  •  
  • 9. J. Aguilar-Hernandez, G. Contreras-Puente, A. Morales-Acevedo, O. Vigil-Galan, F. Cruz-Gandarilla, J. Vidal-Larramendi, A. Escamilla-Esquivel, H. Hernandez-Contreras, M. Hesiquio-Garduno, and A. Arias-Carbajal, Semicond. Sci. Tech. 18[2] (2003) 111-114.
  •  
  • 10. R.L. Penn and J.F. Banfield, Am. Mineral. 83[9-10] (1998) 1077-1082.
  •  
  • 11. U. Rentsennorov, B. Davaabal, B. Dovchin, and JadambaaTemuujin, J. Ceram. Process. Res. 22[2] (2021) 232-239.
  •  
  • 12. T.V. Khai, P.T. Trang, L.N. Long, T.V. Le, and P.T. Mai, J. Ceram. Process. Res. 22[4] (2021) 425-435.
  •  
  • 13. A. Chimento, A. Santarsiero, D. Iacopetta, J. Ceramella, A.D. Luca, V. Infantino, O. Parisi, P. Avena, M. Bonomo, and C. Saturnino, Int. J. Mol. Sci. 22[10] (2021).
  •  
  • 14. R. Srinivasan, B.S. Babu, P. Prathap, R. Whenish, and G.C.F. A, J. Ceram. Process. Res. 22[1] (2021) 16-24.
  •  
  • 15. M. Bugdayci, S. Baslayici, and M.E. Ama, J. Ceram. Process. Res. 22[1] (2021) 98-105.
  •  
  • 16. A.A. Al-Allaq, J.S. Kashan, M.T.I. El-Wakad, and A. Soliman, J. Ceram. Process. Res. 22[4] (2021) 446-454.
  •  
  • 17. X. Luo, F. Li, C. Qiao, F. Yuan, and C. Zhou, Therm. Sci. 27[3 Part A] (2023) 2183-2194.
  •  
  • 18. E.M. Larramendi, E. Puron, and L.C. Hernandez, J. Cryst. Growth. 223[4] (2001) 447-449.
  •  
  • 19. R. Takahashi, Y. Yonezawa, M. Ohtani, M. Kawasaki, K. Nakajima, T. Chikyow, H. Koinuma, and Y. Matsumoto, Adv. Funct. Mater. 16[4] (2006) 485-491.
  •  
  • 20. Y. Xin, N.D. Browning, S. Rujirawat, S. Sivananthan, Y.P. Chen, P.D. Nellist, and S.J. Pennycook, J. Appl. Phys. 84[8] (1998) 4292-4299.
  •  

This Article

  • 2023; 24(6): 935-940

    Published on Dec 31, 2023

  • 10.36410/jcpr.2023.24.6.935
  • Received on Jun 28, 2023
  • Revised on Aug 22, 2023
  • Accepted on Aug 30, 2023

Correspondence to

  • Xiang-Xiang Luo a,b, Chun-Sheng Zhou a
  • aCollege of Chemical Engineering and Modern Materials, Shangluo University, China
    bSchool of Chemistry, University of Bristol, UK
    Tel : 08613991149672 Fax: 086 0914-2986027

  • E-mail: luo_xiangx@163.com, slzhoucs@126.com