Articles
  • Effect of different abrasive grain sizes of the diamond grinding wheel on the surface characteristics of GaN
  • Joo Hyung Leea, Seung Hoon Leeb, Hee Ae Leeb, Nuri Oha, Sung Chul Yib,c and Jae Hwa Parkd,*

  • aDivision of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea
    bCeramic research institute, Hanyang University, Seoul 04763, Korea
    cDepartment of Chemical Engineering, Hanyang University, Seoul 04763, Korea
    dAMES Micron Co. Ltd., Gimpo 10124, Korea

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

References
  • 1. H.P. Maruska, and J.J. Tietjen, Appl. Phys. Lett. 15 (1969) 327-329.
  •  
  • 2. A.S. Augustine Fletcher, and D. Nirmal, Superlattices Microstruct. 109 (2017) 519-537.
  •  
  • 3. E. Gu, C.W. Jeon, H.W. Choi, G. Rice, M.D. Dawson, E.K. Illy, and M.R.H. Knowles, Thin Solid Films 453-454 (2004) 462-466.
  •  
  • 4. F.K. Yam, L.L. Low, S.A. Oh, and Z. Hassan, in "Gallium nitride: an overview of structural defects" (InTech, 2011) p. 99-136.
  •  
  • 5. J. D.D. Manchon, J. A.S. Barker, P.J. Dean, and R.B. Zetterstrom, Solid State Commun. 8 (1970) 1227-1231.
  •  
  • 6. H. Aida, H. Takeda, S.W. Kim, N. Aota, K. Koyama, T. Yamazaki, and T. Doi, Appl. Surf. Sci. 292 (2014) 531-536.
  •  
  • 7. L. Zhang, and H. Deng, Appl. Surf. Sci. 514 (2020) 145957.
  •  
  • 8. H. Lee, H. Kasuga, H. Ohmori, H. Lee, and H. Jeong, J. Cryst. Growth 326 (2011) 140-146.
  •  
  • 9. H. Aida, T. Doi, H. Takeda, H. Katakura, S.W. Kim, K. Koyama, T. Yamazaki, and M. Uneda, Curr. Appl. Phys. 12 (2012) S41-S46.
  •  
  • 10. K.J. Kim, J.S. Jeong, H.J. Jang, H.M. Shin, and H.D. Jeong, J. Korean Soc. Precis. Eng. 25 (2008) 32-37.
  •  
  • 11. H. Aida, H. Takeda, K. Koyama, H. Katakura, K. Sunakawa, and T. Doi, J. Electrochem. Soc. 158 (2011) 1206-1212.
  •  
  • 12. J. Murata, T. Okamoto, S. Sadakuni, A.N. Hattori, K. Yagi, Y. Sano, K. Arima, and K. Yamauchi, J. Electrochem. Soc. 159 (2012) 417-420.
  •  
  • 13. H.A. Lee, J.H. Lee, S.H. Lee, H.S. Kang, S.K. Lee, N. Oh, W.I. Park, and J.H. Park, J. Ceram. Process. Res. 21 (2020) 609-614.
  •  
  • 14. J.J. Kim, and J.K. Lee, J. Ceram. Process. Res. 21 (2020) s68-s73.
  •  
  • 15. C. Sun, E. Müller, M. Meffert, and D. Gerthsen, Adv. Struct. Chem. Imaging 5 (2019).
  •  
  • 16. D. Key, E. Letts, C.W. Tsou, M.H. Ji, M. Bakhtiary-Noodeh, T. Detchprohm, S.C. Shen, R. Dupuis, and T. Hashimoto, Materials 12 (2019) 1925.
  •  
  • 17. J.H. Shim, J.S. Park, and J.G. Park, RSC Adv. 10 (2020) 21860-21866.
  •  
  • 18. V.V. Voronenkov, Y.S. Lelikov, A.S. Zubrilov, Y.G. Shreter, and A.A. Leonidov, in 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering, January 2019, (IEEE, 2019) pp. 833-837.
  •  
  • 19. M. Li, Y. Cheng, T. Yu, J. Wu, J. He, N. Liu, T. Han, and G. Zhang, Mater. Des. 180 (2019) 107985.
  •  
  • 20. T.Y. Tang, W.Y. Shiao, C.H. Lin, K.C. Shen, J.J. Huang, S.Y. Ting, T.C. Liu, C.C. Yang, C.L. Yao, J.H. Yeh, T.C. Hsu, W.C. Chen, H.C. Hsu, and L.C. Chen, J. Appl. Phys. 105 (2009) 023501.
  •  
  • 21. H. Harima, J. Phys.: Condens. Matter 14 (2002) R967-R993.
  •  
  • 22. C. Röder, F. Lipski, F. Habel, G. Leibiger, M. Abendroth, C. Himcinschi, and J. Kortus, J. Phys. D: Appl. Phys. 46 (2013) 285302.
  •  
  • 23. G. Nootz, A. Schulte, L. Chernyak, A. Osinsky, J. Jasinski, M. Benamara, and Z. Liliental-Weber, Appl. Phys. Lett. 80 (2002) 1355-1357.
  •  
  • 24. J.H. Park, H.A. Lee, J.H. Lee, C.W. Park, J.H. Lee, H.S. Kang, H.M. Kim, S.H. Kang, S.Y. Bang, S.K. Lee, and K.B. Shim, J. Ceram. Process. Res. 18 (2017) 93-97.
  •  
  • 25. J.H. Park, H.A. Lee, C.W. Park, H.S. Kang, J.H. Lee, J.H. In, S.K. Lee, and K.B. Shim, J. Ceram. Process. Res. 19 (2018) 439-443.
  •  
  • 26. J. Neugebauer, and C.G.V.d. Walle, Appl. Phys. Lett. 69 (1996) 503-505.
  •  
  • 27. D.M. Hofmann, D. Kovalev, G. Steude, B.K. Meyer, A. Hoffmann, L. Eckey, R. Heitz, T. Detchprom, H. Amano, and I. Akasaki, Phys. Rev. B 52 (1995) 16702-16706.
  •  
  • 28. C. Jung, J. Hwang, G. Yoo, D. Min, Y. Ryu, S. Moon, M. Kim, K. Shim, and O. Nam, J. Ceram. Process. Res. 15 (2014) 120-124
  •  
  • 29. S.O. Kucheyev, M. Toth, M. R. Phillips, J. S. Williams, C. Jagadish, and G. Li, J. Appl. Phys. 91 (2002) 5867-5874.
  •  
  • 30. A. Watanabe, T. Takeuchi, K. Hirosawa, H. Amano, K. Hiramatsu, and I. Akasaki, J. Cryst. Growth 128 (1993) 391-396.
  •  
  • 31. S. Malkin and T.W. Hwang, CIRP Ann. 45 (1996) 569-580.
  •  
  • 32. Q. Jiang, L. Zhang, and C. Yang, Mater. Sci. Semicond. Process. 122 (2021) 105446.
  •  
  • 33. A. Esmaeilzare, A. Rahimi, and S.M. Rezaei, Appl. Surf. Sci. 313 (2014) 67-75.
  •  
  • 34. S. Li, Z. Wang, and Y. Wu, J. Mater. Process. Technol. 205 (2008) 34-41.
  •  
  • 35. S.J. Eder, S. Leroch, P.G. Grützmacher, T. Spenger, and H. Heckes, Int. J. Mech. Sci. 194 (2021) 106186.
  •  
  • 36. H.Y. Kim, J.A. Freitas jr., and J. Kim, EPL 96 (2011) 26004-p1.
  •  
  • 37. M.A. Reshchikov, and H. Morkoç, J. Appl. Phys. 97 (2005) 5-19.
  •  
  • 38. X. Zhang, C. Yang, Y. Zhang, A. Hu, M. Li, L. Gao, H. Ling, and T. Hang, Electron. Mater. Lett. 16 (2020) 355-362.
  •  
  • 39. B. Zhang, and J. Yin, Int. J. Extreme Manuf. 1 (2019) 012007.
  •  

This Article

  • 2022; 23(4): 436-442

    Published on Aug 31, 2022

  • 10.36410/jcpr.2022.23.4.436
  • Received on May 25, 2022
  • Revised on Jul 13, 2022
  • Accepted on Jul 27, 2022

Correspondence to

  • Jae Hwa Park
  • AMES Micron Co. Ltd., Gimpo 10124, Korea
    Tel : +82-70-8220-3773 Fax: +82-31-992-2700

  • E-mail: jhpark3809@gmail.com