Articles
  • Enhanced optical output power of AlGaN/GaN ultraviolet light-emitting diodes fabricated with breakdown induced conductive channels

  • Seonghoon Jeonga, Sung-Nam Leeb, Chel-Jong Choia,* and Hyunsoo Kima,*

  • aSchool of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 54896, Korea
    bDepartment of Nano-Optical Engineering, Korea Polytechnic University, Siheung 15073, Korea

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This Article

  • 2020; 21(S1): 23-27

    Published on May 31, 2020

  • 10.36410/jcpr.2020.21.S1.s23
  • Received on Dec 13, 2019
  • Revised on Apr 24, 2020
  • Accepted on May 4, 2020

Correspondence to

  • Chel-Jong Choi and Hyunsoo Kim

  • School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 54896, Korea
    Tel : +82-63-270-3974
    Fax: +82-63-270-3585

  • E-mail: cjchoi@jbnu.ac.kr, hskim7@jbnu.ac.kr