Articles
  • Structural and optical characterization of Ru2Si3 layers on Si formed by a two-step channeled ion implantation
  • ChangChun Chena,*, BenHai Yub and JiangFeng Liub
  • a College of Materials Science and Engineering, Nanjing University of Technology, NO.5 Xinmofan Road, Nanjing 210009, China b College of Physics & Electronic Engineering, Xinyang Normal University, Henan Province, 464000, China
Abstract
Structural and optical properties have been investigated for Ru2Si3 layers on Si (100) formed by two-step channeled ion implantations (70 keV, 6.92 × 1016/cm2 and 40 keV, 4.31 × 1016/cm2) and subsequent annealing at 1150 oC for 120 second. Rutherford backscattering/ ion channeling (RBS/C) analyses have revealed that the Ru2Si3 layers were grown on the Si substrate but with a rather poor crystalline quality. The optical spectra have been obtained by spectroscopic ellipsometry (SE) and optical absorption measurements. From the optical investigations, the real and imaginary parts of the dielectric function as well as the absorption coefficient have been derived. The spectra of Ru2Si3 layers exhibit a semi-conducting character with an allowed direct band gap of 0.843 eV.

Keywords: Ru2Si3, Channeled ion implantation, spectroscopic ellipsometry (SE), optical properties.

This Article

  • 2009; 10(5): 692-695

    Published on Oct 31, 2009

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