Articles
  • Structural characterization of Eu-doped GaN by transmission electron microscopy
  • Jongwon Seoa,*, Shaoqiang Chena, Junji Sawahataa, Masaharu Mitomeb and Katsuhiro Akimotoa
  • a Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan b Nanoscale Material Center, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
Abstract
The structural properties of Eu-doped GaN films grown on sapphire (0001) substrates by molecular beam epitaxy were studied using cross sectional transmission electron microscopy (TEM). The Eu concentration was estimated to be about 2at.% by Rutherford backscattering spectrometry and energy dispersive X-ray spectroscopy. Selected area diffraction patterns of the film showed a hexagonal structure, and no other anomalous patterns such as from Eu and EuN were observed. The high resolution TEM observation of the films showed a high density of stacking faults which was hardly observed in undoped GaN, bending layers and a small portion of cubic phase. The causes of the formation of stacking faults and bending of layers are discussed.

Keywords: GaN, TEM, HRTEM, XRD, EDS, Rare Earth (Eu).

This Article

  • 2008; 9(1): 68-70

    Published on Feb 28, 2008

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