Articles
  • Effects of a H2SO4 treatment on the optical properties in porous Si layers and electrical properties of diode devices fabricated with a H2SO4 treated porous Si layer
  • Do-Hyun Oha,b, Tae Whan Kima,*, Woon-Jo Chob and Kae Dal Kwacka
  • a Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea b Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
Abstract
The effects of a H2SO4 treatment on the optical properties in porous silicon (PS) layers were investigated by using photoluminescence (PL) measurements, and electrical properties of diode devices fabricated with a PS were investigated by current density-applied voltage (J-V) measurements. Scanning electron microscopy images showed that the PS layers were formed by electrochemical anodization. While the PL intensity of the PS layer immersed into H2SO4 solution was significantly increased in comparison with that of the as-formed PS layer, the PL peak position did not change regardless of variations in the H2SO4 treatment time due to the invariance of the crystal structure of the PS layer. The J-V curve for the indium-tin-oxide/ H2SO4 treated PS layer/n-Si/Al structure showed diode characteristics with a small turn-on voltage.

Keywords: porous Si layers, H2SO4 treatment, optical property, electrical property.

This Article

  • 2008; 9(1): 57-60

    Published on Feb 28, 2008

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