Articles
  • Resistive switching random access memory based on Sn-incorporated Cs(PbxSn1-x)Br3 perovskite thin films

  • Seung-Beom Cho†, Hye-Yun Seong† and Il-Kyu Park*

  • Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Korea

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We investigated the performance of resistive random access memory (RRAM) consisting of Sn-incorporated Cs(PbxSn1-x)Br3 thin films. The uniform Cs(PbxSn1-x)Br3 perovskite thin films with various Sn contents were formed by using the solution-based spin coating method. The structural and optical investigations showed that the Sn element was successfully incorporated into the CsPbBr3 lattice. As the Sn content increases, secondary phases like SnBr2 and CsSn2Br5 were also formed in the Cs(PbxSn1-x)Br3 perovskite thin films. RRAM device consisting of the pristine CsPbBr3 thin film showed typical RRAM switching behavior and an operating voltage of about 0.7 V. The RRAM switching behavior of the CsPbBr3 was suggested based on the migration of halide vacancies, which forms the conducting filament when the electric field is applied. As the content of the Sn element increases, the transition voltage shifted to the lower voltage side to about 0.3~0.4 V. The switching performances of the RRAM device were affected by the Sn content in the Cs(PbxSn1-x)Br3 perovskite thin films due to the formation of defects and secondary phases


Keywords: Perovskite, CsPbBr3, Lead-free, RRAM, Phase control

This Article

  • 2022; 23(5): 672-678

    Published on Oct 31, 2022

  • 10.36410/jcpr.2022.23.5.672
  • Received on Mar 20, 2022
  • Revised on May 31, 2022
  • Accepted on Jun 4, 2022

Correspondence to

  • Il-Kyu Park

  • Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Korea
    Tel : +82-2-970-6349 Fax: +82-2-973-6657

  • E-mail: pik@seoultech.ac.kr