Articles
  • Dielectric properties of KTN(80/20) thin films with pzt buffer layer for tunable microwave devices

  • Kyeong-Min Kima,#, Sam-Haeng Leea,b,#, Byeong-Jun Parka, Joo-Seok Parkb and Sung-Gap Leea,*

  • aDept. of Materials Engineering and Convergence Technology, RIGET, Gyeongsang National University, Jinju 52828, Korea
    bBusiness Cooperation Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Korea

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

K(Ta0.80Nb0.20)O3 films with Pb(Zr0.52Ti0.48)O3PZT buffer layer on Pt/Ti/SiO2/Si substrate were fabricated by sol-gel and spin-coating method. Structural and electrical properties were measured with variation of the sintering temperature, and the applicability to microwave materials was investigated. All K(Ta0.80Nb0.20)O3 films showed a cubic crystal structure. Average grain size was about 123~193 nm and average thickness of the K(Ta0.80Nb0.20)O3 films was approximately 366 nm. Through the AFM results, root mean square roughness (Rrms) of all K(Ta0.80Nb0.20)O3 films was around 6 nm. All K(Ta0.80Nb0.20)O3 films showed a tendency to increase dielectric loss as frequency increased. As the sintering temperature increased, tunability with an applied DC voltage indicated a decreasing tendency. Tunability and temperature coefficient of the K(Ta0.80Nb0.20)O3 film sintered at 700 oC showed good values of 22.1% at 10 V, -0.594/oC


Keywords: K(Ta0.80Nb0.20)O3, Microwave tunable devices, Buffer layer, Sol-gel, Spin coating

This Article

  • 2022; 23(1): 29-32

    Published on Feb 28, 2022

  • 10.36410/jcpr.2022.23.1.29
  • Received on May 18, 2021
  • Revised on Oct 5, 2021
  • Accepted on Oct 9, 2021

Correspondence to

  • Sung-Gap Lee

  • Dept. of Materials Engineering and Convergence Technology, RIGET, Gyeongsang National University, Jinju 52828, Korea
    Tel : +82-55-772-1687 Fax: +82-55-772-1689

  • E-mail: lsgap@gnu.ac.kr