Articles
  • Controlled infiltration profile of SiC coating layer on graphite by Si vapor deposition reaction
  • Kuk-Jin Hwanga,b, Kyoung-Ho Kima,b, Yoon-Cheol Leec, Jung-Tae Hwangc, Heesoo Leeb, Seong-Min Jeonga, Myung-Hyun Leea and Si-Young Baea,*
  • aEnergy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, Jinju-si Gyeongsangnam-do 52851, Korea bDepartment of Materials Science and Engineering, Pusan National University, Busan 609-735, Korea cGenecoat, Hwaseong-si Gyeonggi-do 18487, Korea
Abstract
SiC-coated graphite was successfully fabricated at different temperatures (1300-1600 oC) through a silicon vapor deposition reaction (Si-VDR) process. Si powder was used for the Si source of the SiC coating layers. When Si powder was evaporated at high temperature near the melting point of bulk Si, Si gases are moved and changed into Si liquid at the surface of the graphite. The high-temperature process facilitated the formation of SiC coating layers on the graphite. The microstructural, mechanical, and thermal oxidation properties of the coated graphite were investigated.

Keywords: Graphite, Silicon vapor deposition reaction (Si-VDR), Silicon carbide, Oxidation.

This Article

  • 2019; 20(2): 169-172

    Published on Apr 30, 2019

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