Articles
  • Controlling of the heterogeniously growing GaN polycrystals using a quartz ring in the edge during the HVPE-GaN bulk growth
  • Jae Hwa Parka,b, Hee Ae Leea , Cheol Woo Parka,b, Hyo Sang Kanga,b, Joo Hyung Leea , Jun-Hyeong Ina , Seong Kuk Leec , and Kwang Bo Shima,*
  • a Division of Advanced Materials Science and Engineering, Hanyang University, Seoul 04763, Korea b AMES Micron Co. LTD, 2, Singok-ro, Gochon-eup, Gimpo-si, Gyeonggi-do, 10124, Korea c UNIMO Photron, Seocho-gu, Bangbae-dong, Seoul 479-12, Korea
Abstract
The outstanding characteristics of high quality GaN single crystal substrates make it possible to apply the manufacture of high brightness light emitting diodes and power devices. However, it is very difficult to obtain high quality GaN substrate because the process conditions are hard to control. In order to effectively control the formation of GaN polycrystals during the bulk GaN single crystal growth by the HVPE (hydride vapor phase epitaxy) method, a quartz ring was introduced in the edge of substrate. A variety of evaluating method such as high resolution X-ray diffraction, Raman spectroscopy and photoluminescence was used in order to measure the effectiveness of the quartz ring. A secondary ion mass spectroscopy was also used for evaluating the variations of impurity concentration in the resulting GaN single crystal. Through the detailed investigations, we could confirm that the introduction of a quartz ring during the GaN single crystal growth process using HVPE is a very effective strategy to obtain a high quality GaN single crystal.

Keywords: HVPE, GaN, Quartz ring.

This Article

  • 2018; 19(5): 439-443

    Published on Oct 30, 2018

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