Articles
  • Flux growth and liquid-phase epitaxy of Mn6+-doped barium sulfate 
  • D. Ehrentraut*, Y.E. Romanyuk and M. Pollnau
  • Advanced Photonics Laboratory, Institute for Imaging and Applied Optics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland * Institute of Multidisciplinary Research for Advanced Materials, Fukuda Lab., Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan
Abstract
We investigated the conditions for the growth of Mn6+-doped from the ternary eutectic NaCl-KCl-CsCl solvent at temperatures of 480-600oC. The doping complex ion MnO4 2− can easily substitute the SO4 2− complex ion in BaSO4 with its orthorhombic space group Pnma. The growth of Mn6+-doped BaSO4 was performed using liquid-phase epitaxy by applying an advanced growth strategy. High-quality layers were grown according to the step-flow mode with step heights of maximum 1.5 unit cells and step widths of 200 nm. The defect density was reduced to 1×103 and 7×104 etch pits cm−2 for (011) and (001), respectively. The growth velocity was one and two unit cells s−1 for 〈001〉 and 〈011〉, respectively.

Keywords: Barium sulfate, Manganese doping, Stability of manganese, Flux growth, Liquid-phase epitaxy

This Article

  • 2004; 5(3): 256-260

    Published on Sep 30, 2004

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