Articles
  • Crystal characteristics of bulk GaN single crystal grown by HVPE method with the increase of thickness
  • Jae Hwa Parka, Hee Ae Leea, Joo Hyung Leea, Cheol Woo Parka, Jung Hun Leea, Hyo Sang Kanga, Hyun Mi Kima, Suk Hyun Kanga,b, Sin Young Bangb, Seong Kuk Leec and Kwang Bo Shima,*
  • a Division of Advanced Materials Science and Engineering, Hanyang University, Seoul 04763, Korea b AMES Micron Co. LTD, 2, Singok-ro, Gochon-eup, Gimpo-si, Gyeonggi-do, 10124, Korea c UNIMO photron, Seoul 137-063 Korea
Abstract
Although GaN has been used in optical materials and power devices, the extent of its application is determined by the crystal quality. Bulk GaN has been reported to produce high-quality GaN. Therefore, it can be used in applications that require highquality crystals, such as high-brightness light-emitting diode, power devices, etc. We grew a 2-inch bulk GaN crystal, using the hydride vapor phase epitaxy (HVPE) method, on a sapphire substrate to a thickness of ~5 mm. X-ray diffraction (XRD) was used to analyze the structure of GaN. Scanning electron microscopy (SEM) was used to measure the etch pits density (EPD) of GaN after wet chemical etching. In addition, high-resolution XRD (HR-XRD) and Raman spectrometry were employed for radius of curvature and residual strains measurements, respectively.

Keywords: HVPE, bulk GaN, dislocation, residual thermal strain, radius curvature

This Article

  • 2017; 18(2): 93-97

    Published on Feb 28, 2017

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