Articles
  • Structural and electrical properties of (Zr,Ti)0.85(Ca,Sr)0.15O1.85 thin films grown on Cu/Ti/SiO2/Si substrate using RF magnetron sputtering
  • Mir Ima, Tae-Ho Leeb, Sang-Hyo Kweonb, Chong-Yun Kanga,c and Sahn Nahma,b,*
  • a KU-KIST Graduate School of Converging Science and Technology, 1-5 Ga, Anam-Dong, Seongbuk-Gu, Seoul 136-713, Korea b Department of Materials Science and Engineering, Korea University, 1-5 Ga, Anam-Dong, Seongbuk-Gu, Seoul 136-701, Korea c Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-1, Hawolgok-Dong, Seongbuk-Gu, Seoul 136-791, Korea
Abstract
(Zr,Ti)0.85(Ca,Sr)0.15O1.85 (ZTCS) films grown on Cu electrode at room temperature showed a crystalline cubic stabilized ZrO2 structure when large sputtering powers (≥ 75 W) were used. The smoothest film, grown at sputtering power of 75W, showed the lowest leakage current (4.0 × 10−6 A/cm2 at 0.75 MV/cm) and highest breakdown voltage (2.7 MV/cm) among all the films prepared, indicating that surface roughness considerably influences the electrical properties of the ZTCS film. A dielectric constant (k) of 21.5 and a tan δ of 0.007 were obtained at 100 kHz, and a similar k of 19.4 with a high quality factor of 52 at 2.0 GHz. Moreover, a high capacitance density (78 nF/cm2) and a small TCC (256 ppm/oC at 100 kHz) were obtained. Such a ZTCS film therefore satisfies the requirements of the International Technology Roadmap for Semiconductors for capacitors grown on organic substrates for 2016.

Keywords: Dielectric, Thin Film, Embedded Capacitor.

This Article

  • 2016; 17(7): 717-721

    Published on Jul 31, 2016

Correspondence to

  • E-mail: