Articles
  • Heteroepitaxial Growth of Boronphosphide III-V Semiconductor on Silicon by Organometallic Chemical Vapor Deposition 
  • Takashi Udagawa* and Goro Shimaokaa
  • Research and Development Center (Chichibu), Showa Denko K.K., 1505 Shimokagemori, Chichibu, Saitama 369-1871, Japan a Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
Abstract
Crystallographic features of boronmonophosphide (BP) semiconducting layers grown directly on (111)Si by a triethylboran/ phosphine atmospheric-pressure MOCVD system were investigated by X-ray diffraction and transmission electron diffraction (TED) techniques. The unintentionally-doped BP layers grown at 1025oC with an input PH3/(C2H5)3B ratio of about 150 had transparent mirror (111) surfaces with an orientation relationship of (111)[110]BP//(111)[110]Si. At the hetero-interface between the MOCVD-grown BP layer and the Si substrate, an amorphous thin layer containing Si, P, and O (oxygen) was formed. In addition to these features, TED pattern revealed that the BP layer consisted of {111} twins. The MOCVD-grown BP layers showed p-type conductivity with a carrier concentration of 6.3´1019 cm-3 and with room temperature mobility of 70 cm2/Vs.

Keywords: Epitaxial growth, Heterostructure, MOCVD, III-V compound semiconductor, Boronphosphide, Si, Twin, Orientation

This Article

  • 2003; 4(2): 80-83

    Published on Jun 30, 2003

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