In this work, In doped ZnO (IZO) thin films were deposited on soda lime glass substrates at 325 oC by metal-organic chemical vapor deposition (MOCVD) using ultrasonic nebulization and the effects of In doping concentration on the structural, electrical and optical properties of In doped ZnO films were investigated. As the source precursors zinc acetylacetonate and Indium acetylacetonate were used respectively. In doping enhanced the (002) preferred orientation and crystallinity of films. The resistivity of In doped ZnO thin film was decreased with the increase of doping ratio until 4 atom%. The lowest resistivity obtained in this experiment was about 4.5 × 10-3 Ω • cm. The average optical transmittance in the visible wave length range was over 80% for all the films regardless of doping concentration. Optical band gap of In doped ZnO thin films decreased with the increase of In doping concentration.

Keywords: words: IZO, Transparent conducting oxide(TCO), Thin Films, MOCVD.