Articles
  • Effect of p-type a-SiO:H buffer layer at the interface of TCO and p-type layer in hydrogenated amorphous silicon solar cells
  • Youngkuk Kima, S. M. Iftiquara, Jinjoo Parka, Jeongchul Leeb and Junsin Yia,*
  • a College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea b Solar cell research center, Korea Institute Energy Research, Korea
Abstract
Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (η). The cells with buffer layer show higher open circuit voltage (Voc), fill factor (FF), short circuit current density (Jsc) and improved blue response with respect to the cell without buffer layer.

Keywords: Hydrogenated amorphous silicon solar cell, RF PECVD, Quantum efficiency, Buffer layer, Silicon oxide

This Article

  • 2012; 13(S2): 336-340

    Published on Nov 30, 2012

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