This work demonstrates that high-energy electron beam irradiation (HEEBI) performed in air at room temperature (RT) affected remarkably the properties of indium-gallium-zinc oxide (IGZO) films grown on glass substrates at RT by radio frequency magnetron sputtering techniques. Hall, photoluminescence, and X-ray photoelectron spectroscopy (XPS) measurements revealed that the n-type conductivity was preserved in HEEBI treated films with a low dose of 1014 electrons/cm2 and converted to p-type conductivity with further increase in the amount of dose, which was attributed to the strong reduction of donor-like oxygen vacancy defects as a result of formation of either oxygen interstitial or zinc vacancy acceptor defects. In addition, Hall and XPS results revealed that the mobility and the amount of In compared to Ga decreased for films treated by HEEBI with a low dose while they increased for those with a high dose. The halo peak at around 34 ο observed from Xray diffraction analysis is attributed to the amorphous IGZO films, indicating that all films prepared in this study have an amorphous structure. These results would contribute to developing high-quality IGZO-based materials and devices for space applications.

Keywords: Indium-gallium-zinc oxide (IGZO) films, High-energy electron beam irradiation (HEEBI), Radio frequency (rf) magnetron sputtering, Photoluminescence, Hall measurements, X-ray photoelectron spectroscopy.