Articles
  • The effect of the substrate temperatures of Bi2O3 buffer layers on the ferroelectric properties of SBT (SrBi2Ta2O9) thin films deposited by an R.F. magnetron sputtering method
  • Ji-Eon Yoona, In-Seok Leea, Sang-Jih Kima, Mi-Sook Wonb and Young-Guk Sona,*
  • a School of Materials Science and Engineering, Pusan National University, Busan 609-735, Republic of Korea b Korea Basic Science Institute, Busan Center, Pusan National University, Busan 609-735, Republic of Korea
Abstract
Bi2O3 buffer layers were deposited on Pt/Ti/SiO2/Si substrates by an R.F. magnetron sputtering method in order to improve the ferroelectric properties of SBT (SrBi2Ta2O9) thin films. The volatility of bismuth brings about an obvious non-stoichiometry of the SBT thin films and causes secondary phases to appear. The Bi2O3 buffer layers were found effective in achieving a lower crystallization temperature and in interrupting the diffusion of Pt towards SBT thin films. In this experiment, we have found that the presence of Bi2O3 buffer layers was responsible for the enhanced ferroelectric properties and crytallinities of SBT thin films.

Keywords: Ferroelectric film, SrBi2Ta2O9 (SBT), Bi2O3 buffer layer, Substrate temperature.

This Article

  • 2008; 9(6): 643-645

    Published on Dec 31, 2008