Articles
  • Crystallization of a-Si : H and a-SiC : H thin films deposited by PECVD
  • Y.T. Kim, S.G. Yoon, H. Kim, S.J. Suh, G.E. Janga, and D.H. Yoon*
  • Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea a Department of Materials Engineering, Chungbuk University, Cheongju 361-763, Korea
Abstract
Hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon carbide (a-SiC:H) films of different compositions were deposited by plasma enhanced chemical vapor deposition (PECVD). For a-Si:H thin films, we have investigated the effect of the rf power on the microstructural properties, such as crystal structure and crystallinity. A diffraction peak (Si (111)) positioned at about 2 theta = 28 degrees appeared from a thin film grown on a Si (100) substrate at rf power of 300 W, suggesting a local crystallization of the film. For a-SiC:H thin films, the predominant peak is ascribed to (200) of beta-SiC structure, which confirms the formation of beta-SiC upon 900 annealing. No peak corresponding to the (111) or (220) planes of beta-SiC is detected, suggesting that the films might exist in a single crystalline state.

Keywords: plasma enhanced chemical vapor deposition; amorphous silicon; amorphous silicon carbide; crystallinity

This Article

  • 2005; 6(4): 294-297

    Published on Dec 30, 2005