Articles - Deposition of Cr-doped SrZrO3 thin films on Si substrates and their resistance switching characteristics
- Min Kyu Yanga,b, Jae-Wan Parkc, Sun Young Choia and Jeon-Kook Leea,*
- a Optoelectronic Materials Center, KIST, Seoul 136-791, Korea b Department of Electrical and Electronic Engineering, Yonsei Univ., Seoul 120-749, Korea c Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53705, USA
Abstract
Cr-doped SrZrO3 perovskite thin films were deposited on SrRuO3 bottom electrode/SiO2/Si(100) substrates by pulsed laser deposition. The SrZrO3 : Cr perovskite and SrRuO3 bottom electrode showed a well controlled interface, as well as good resistive switching behavior with an ON/OFF ratio > 103. Resistive switching memory devices made from Cr-doped SrZrO3 thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.
Keywords: Resistive switching, SrZrO3, Non-volatility memory
This Article
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