Articles
  • Effects of alkali-borosilicate glass additions on the microstructure and dielectric properties of Ba0.88(Nd1.40Bi0.42La0.30)Ti4O12
  • Chang-Lun Liaoa, Kuan-Hong Linb,* and Shun-Tian Lina
  • a Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, R.O.C. b Department of Mechanical Engineering, Tungnan University, Shen-Keng, Taipei 222, Taiwan, R.O.C.
Abstract
The microstructures and dielectric properties of Ba0.88(Nd1.40Bi0.42La0.30)Ti4O12/ alkali-borosilicate glass composites were investigated in this study, with the volume percentage of the glass phase in the composite being either 50, 55, or 60 vol.%. Sintered density measurements indicated that the density increased with an increase in the sintering temperature for the composites with 50 and 55 vol.% glass additions, but, at a sintering temperature higher than 800 oC, the density decreased for the composite with a 60 vol.% glass addition. XRD patterns revealed that the peak of the highest intensity in the B(NBL)T crystal belongs to the (401) crystal plane, while that in the B(NBL)T/glass composites to the (320) crystal plane. Along with the change in crystalline preferred orientation, the lattice constants of the crystal also changed. SEM micrographs indicated that the B(NBL)T phase developed into columnar grains at sintering temperatures higher than 1260 oC. Moreover, when glass was added, the grain morphology changed, especially at sintering temperatures higher than 850 oC. When sintered at 950 oC for 2 hours, the composite with 55 vol.% glass yielded the highest dielectric constant (εr= 23.2), the lowest dielectric loss (tanδ = 4.1 × 10-3), and a high Q×f value (Q × f = 1,620 GHz, Q = 1/tanδ, f = 6.67 GHz). Key words: Sintering; Microstructure-final, Dielectric properties, Ba0.88(Nd1.40Bi0.42La0.30)Ti4O12, Stru

Keywords: Sintering; Microstructure-final, Dielectric properties, Ba0.88(Nd1.40Bi0.42La0.30)Ti4O12, Structural applications.

This Article

  • 2008; 9(6): 562-568

    Published on Dec 31, 2008

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