Articles
  • Comparison of phonon-limited electron mobility in strained Si grown on silicon on insulator (sSOI) and SiGe on insulator (SGOI)
  • Tae-Hun Shim and Jea-Gun Park*
  • Department of Electrical & Computer Engineering, Nano-SOI Process Laboratory, Hanyang University, Seongdong-gu, Seoul 133-791, Korea
Abstract
Through theoretical calculation, the phonon-limited electron mobility in fully depleted strained Si n-channel MOSFETs fabricated on silicon on insulator (i.e., sSOI) and SiGe on insulator (SGOI) was compared between the two structures as a function of Si thickness. In the Si thickness range from 10 nm down to 3 nm, the phonon-limited electron mobility in the sSOI n-MOSFET was about 1.5 times higher than that of a conventional SOI n-MOSFET. In particular, it was found that the electron mobility in the sSOI n-MOSFET was about 3% lower than that in the SGOI n-MOSFET. This difference can be attributed to two physical phenomena: first, that the sSOI n-MOSFET has higher inter-valley scattering rates than does the SGOI n-MOSFET, because of its greater carrier confinements: and second, that some electrons in the inversion layer of the SGOI n-MOSFET tunnel into the SiGe layer. These theoretical results are strongly consistent with previous experimental results.

Keywords: Strained Silicon, sSOI n-MOSFET, Ultra-thin Body, Electron Mobility Enhancement

This Article

  • 2005; 6(4): 332-337

    Published on Dec 30, 2005

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